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TNY263-268
Conditions
Parameter
Symbol
SOURCE = 0 V; T J = -40 to 125 °C
See Figure 18
Min
Typ
Max
Units
(Unless Otherwise Speci?ed)
Output (cont.)
TNY266
I D = 35 mA
T J = 25 °C
T J = 100 °C
14
21
16
24
ON-State
Resistance
R DS(ON)
TNY267
I D = 45 mA
T J = 25 °C
T J = 100 °C
7.8
11.7
9.0
13.5
Ω
TNY268
I D = 55 mA
T J = 25 °C
T J = 100 °C
5.2
7.8
6.0
9.0
OFF-State Drain
Leakage Current
I DSS
V BP = 6.2 V,
V EN/UV = 0 V,
V DS = 560 V,
T J = 125 °C
TNY263-266
TNY267-268
50
100
μ A
Breakdown
Voltage
Rise Time
Fall Time
Drain Supply
Voltage
Output EN/UV Delay
Output Disable
Setup Time
Auto-Restart
ON-Time
Auto-Restart
Duty Cycle
BV DSS
t R
t F
t EN/UV
t DST
t AR
DC AR
V BP = 6.2 V, V EN/UV = 0 V,
See Note H, T J = 25 °C
Measured in a Typical Flyback
Converter Application
See Figure 20
T J = 25 °C
See Note I
700
50
50
50
0.5
50
5.6
10
V
ns
ns
V
μ s
μ s
ms
%
NOTES:
A. Total current consumption is the sum of I S1 and I DSS when EN/UV pin is shorted to ground (MOSFET not switching) and the sum of
I S2 and I DSS when EN/UV pin is open (MOSFET switching).
B. Since the output MOSFET is switching, it is dif?cult to isolate the switching current from the supply current at the
DRAIN. An alternative is to measure the BYPASS pin current at 6.1 V.
C. BYPASS pin is not intended for sourcing supply current to external circuitry.
D. See Typical Performance Characteristics section for BYPASS pin start-up charging waveform.
E. For current limit at other di/dt values, refer to Figure 25.
F. This parameter is derived from characterization.
G. This parameter is derived from the change in current limit measured at 1X and 4X of the di/dt shown in the I LIMIT speci?cation.
H. Breakdown voltage may be checked against minimum BV DSS speci?cation by ramping the DRAIN pin voltage up to but not
exceeding minimum BV DSS .
I.
Auto-restart on time has the same temperature characteristics as the oscillator (inversely proportional to frequency).
15
www.powerint.com
Rev. H 02/09
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